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| MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon P b Lead(Pb)-Free 1 COLLECTOR 3 3 1 2 BASE 2 EMITTER SC-89 (SOT-523F) Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD RJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2222AT=1P ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) (2) Collector-Base Breakdown Voltage (IC= 10 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 V) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 V) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 20 100 V V V nA nA WEITRON http://www.weitron.com.tw 1/6 28-Apr-2010 MMBT2222AT ON CHARACTERISTICS2 DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base -Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) HFE 35 50 75 100 40 - - 0.6 - - - - - - 0.3 1.0 1.2 2.0 - VCE(sat) V VBE(sat) V SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small -Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 250 - - 0.25 - 75 25 - - 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF k X 10- 4 - mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf - - - - 10 25 225 60 ns ns 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. WEITRON http://www.weitron.com.tw 2/6 28-Apr-2010 MMBT2222AT SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V + 16 V 0 1.0 to 100s, DUTY CYCLE ~ 2% ~ 200 + 16 V 0 1.0 to 100s, DUTY CYCLE ~ 2% ~ 200 1.0 k C S* < 10 pF - 2.0V <2.0 ns -14 V < 20 ns 1.0 k C S *< 10 pF 1N914 - 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time 1000 700 h FE , DC CURRENT GAIN 500 300 200 T J = +125C +25C 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 700 1.0k -55C VCE = 1.0 V VCE = 10 V I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 T J = 25C 0.8 0.6 0.4 I C=1.0 mA 10 mA 100mA 500mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region WEITRON http://www.weitron.com.tw 3/6 28-Apr-2010 MMBT2222AT 200 100 70 50 I C /I B = 10 TJ= 25C t , RISE TIME (ns) t r @V CC= 30V t d@V EB(off) = 2.0V t d@V EB(off) =0 100 70 50 t 's= t s-1/8 t f V CC= 30V I C/ I B= 10 I B1 = I B2 TJ= 25C t , TIME (ns) 30 20 30 20 tf 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn - Off Time 10 10 R S = OPTIMUM 8 I C = 1.0 mA, R S = 150 I C = 500 A, R S = 200 I C = 100 A, R S = 2.0 k I C = 50 A, R S = 4.0 k RS = SOURCE RS = RESISTANCE f = 1.0 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 6 6 I C=50 A 100 A 500 A 1.0 mA 4 4 2 2 0 0.01 0.02 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (k) Figure 7. Frequency Effects 30 20 Figure 8. Source Resistance Effects f T ,CURRENT- GAIN BANDWIDTH PRODUCT (MHz) 500 300 V CE = 20 V T J = 25C CAPACITANCE (pF) C eb 10 7.0 5.0 200 100 C cb 3.0 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 70 50 1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitance Figure 10. Current- Gain Bandwidth Product WEITRON http://www.weitron.com.tw 4/6 28-Apr-2010 MMBT2222AT 10 +0.5 T J = 25C 0.8 0 R VC for V CE(sat) V, VOLTAGE ( VOLTS ) V BE(sat) @ I C /I B =10 0.6 COEFFICIENT (mV/ C) 1.0 V - 0.5 V BE(on) @ V CE =10 V 0.4 -1.0 -1.5 0.2 -2.0 R VB for V BE V CE(sat) @ I C /I B =10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k - 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients WEITRON http://www.weitron.com.tw 5/6 28-Apr-2010 MMBT2222AT SC-89 Package Outline Dimensions A Unit:mm 3 T OP V IE W 2 1 K G D B S M C J N Dim A B C D G J K M N S SC-89 Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50 Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60 Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70 WEITRON http://www.weitron.com.tw 6/6 28-Apr-2010 |
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